| Ident. | Authors (with country if any) | Title |
|---|
| 000152 |
| InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications |
| 000182 |
| Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes |
| 000451 |
| Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs |
| 000644 |
| Interface luminescence and lasing at a type II single broken-gap heterojunction |
| 000752 |
| Optical switching in midinfrared light-emitting diodes |
| 000818 |
| Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunction |
| 000A25 |
| Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection |
| 000A53 |
| Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm |
| 000C84 |
| Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering |
| 000D85 |
| InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature |
| 000D90 |
| High power 4.6 μm light emitting diodes for CO detection |
